Electron transport near the Mott transition inn-GaAs andn-GaN-Reference-Cited by-同舟云学术

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Electron transport near the Mott transition inn-GaAs andn-GaN

Published:2015-10-13 Issue:1 Volume:89 Page:52-59
ISSN:0141-1594
Container-title:Phase Transitions
language:en
Short-container-title:Phase Transitions

Author:

Romanets P.N.,Sachenko A.V.

Publisher

Informa UK Limited

Subject

General Materials Science,Instrumentation

Link

http://www.tandfonline.com/doi/pdf/10.1080/01411594.2015.1077956

Reference18 articles.

1. Electrical Properties of Pure Silicon and Silicon Alloys Containing Boron and Phosphorus

2. Hall coefficient factor for polar mode scattering in n-type GaAs

3. Activation energies of Si donors in GaN

4. Metal-Insulator Transition

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Equilibrium Statistics of Carriers;Semiconductor Physics;2023

2. Equilibrium Statistics of Carriers;Semiconductor Physics;2022

3. http://journal-spqeo.org.ua;Semiconductor Physics Quantum Electronics and Optoelectronics;2018-03-29

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