Initial leakage current paths in the vertical-type GaN-on-GaN Schottky barrier diodes-Reference-Cited by-同舟云学术

Initial leakage current paths in the vertical-type GaN-on-GaN Schottky barrier diodes

Published:2017-09-18 Issue:12 Volume:111 Page:122102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Sang Liwen¹²,Ren Bing¹,Sumiya Masatomo³^ORCID,Liao Meiyong³,Koide Yasuo²⁴^ORCID,Tanaka Atsushi²⁴,Cho Yujin¹,Harada Yoshitomo⁵^ORCID,Nabatame Toshihide¹²,Sekiguchi Takashi¹,Usami Shigeyoshi⁴,Honda Yoshio⁴,Amano Hiroshi²⁴

Affiliation:

1. International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan

2. Amano-Koide Collaborative Research Lab, National Institute for Materials Science, (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan

3. Wide Bandgap Materials Group, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan

4. Institute of Materials and Systems for Sustainability, Nagoya University, Furo-cho c3-1, Nagoya, Aichi 464-8601, Japan

5. Hosei University, Koganei, Tokyo 184-8584, Japan

Funder

Ministry of Education, Culture, Sports, Science and Technology (MEXT)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Reference22 articles.

1. AlGaN/GaN high electron mobility field effect transistors with low 1/f noise

2. Fabrication and performance of GaN electronic devices

3. High-voltage vertical GaN Schottky diode enabled by low-carbon metal-organic chemical vapor deposition growth

4. Extremely Low On-Resistance and High Breakdown Voltage Observed in Vertical GaN Schottky Barrier Diodes with High-Mobility Drift Layers on Low-Dislocation-Density GaN Substrates

5. Nearly ideal vertical GaN Schottky barrier diodes with ultralow turn-on voltage and on-resistance

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