High-voltage vertical GaN Schottky diode enabled by low-carbon metal-organic chemical vapor deposition growth
Author:
Affiliation:
1. HRL Laboratories, LLC, 3011 Malibu Canyon Road, Malibu, California 90265-4797, USA
Funder
Advanced Research Projects Agency - Energy (ARPA-E)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.4941814
Reference22 articles.
1. High Breakdown Voltage Undoped AlGaN–GaN Power HEMT on Sapphire Substrate and Its Demonstration for DC–DC Converter Application
2. 1200-V Normally Off GaN-on-Si Field-Effect Transistors With Low Dynamic on -Resistance
3. kV-Class GaN-on-Si HEMTs Enabling 99% Efficiency Converter at 800 V and 100 kHz
4. 7.5 kW/mm2 current switch using AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors on SiC substrates
5. Electrothermal Simulation and Thermal Performance Study of GaN Vertical and Lateral Power Transistors
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