JBS Device Design and Post-Etch Surface Repair Process Research
Author:
Affiliation:
1. Beijing University of Technology,The Key Laboratory of Optoelectronics Technology, Ministry of Education,Chaoyang District,Beijing,China,100124
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10399638/10399484/10399721.pdf?arnumber=10399721
Reference10 articles.
1. Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices
2. Quasi-Vertical GaN Schottky Barrier Diode on Silicon Substrate With 1010 High On/Off Current Ratio and Low Specific On-Resistance
3. Gallium nitride vertical power devices on foreign substrates: a review and outlook
4. Initial leakage current paths in the vertical-type GaN-on-GaN Schottky barrier diodes
5. Progress of AlGaN/GaN heterojunction Schottky diodes[J];KANG;Journal of Power Supplies,2019
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