AlGaN/GaN high electron mobility field effect transistors with low 1/f noise
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.122093
Reference19 articles.
1. Wide bandgap semiconductor materials and devices
2. Short channel AlGaN/GaN MODFET's with 50-GHz f/sub T/ and 1.7-W/mm output-power at 10 GHz
3. Low-frequency noise in n-GaN
4. Low-frequency noise in GaN/GaAlN heterojunctions
5. Low-frequency noise in AlGaN/GaN heterostructure field effect transistors
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