Improvement of DC Performance and RF Characteristics in GaN-Based HEMTs Using SiNx Stress-Engineering Technique

Author:

Deng Chenkai12,Wang Peiran2,Tang Chuying12,Hu Qiaoyu2,Du Fangzhou2ORCID,Jiang Yang3ORCID,Zhang Yi3,Li Mujun2,Xiong Zilong2,Wang Xiaohui2ORCID,Wen Kangyao4ORCID,Li Wenmao12ORCID,Tao Nick5,Wang Qing26,Yu Hongyu26

Affiliation:

1. School of Energy Science and Engineering, Harbin Institute of Technology, Harbin 150001, China

2. School of Microelectronics, Southern University of Science and Technology, Shenzhen 518055, China

3. Faculty of Engineering, The University of Hong Kong, Hong Kong 999077, China

4. State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China

5. Maxscend Microelectronics Company Ltd., Wuxi 214072, China

6. Engineering Research Center of Integrated Circuits for Next-Generation Communications, Ministry of Education, Southern University of Science and Technology, Shenzhen 518055, China

Abstract

In this work, the DC performance and RF characteristics of GaN-based high-electron-mobility transistors (HEMTs) using the SiNx stress-engineered technique were systematically investigated. It was observed that a significant reduction in the peak electric field and an increase in the effective barrier thickness in the devices with compressive SiNx passivation contributed to the suppression of Fowler–Nordheim (FN) tunneling. As a result, the gate leakage decreased by more than an order of magnitude, and the breakdown voltage (BV) increased from 44 V to 84 V. Moreover, benefiting from enhanced gate control capability, the devices with compressive stress SiNx passivation showed improved peak transconductance from 315 mS/mm to 366 mS/mm, along with a higher cutoff frequency (ft) and maximum oscillation frequency (fmax) of 21.15 GHz and 35.66 GHz, respectively. Due to its enhanced frequency performance and improved pinch-off characteristics, the power performance of the devices with compressive stress SiNx passivation was markedly superior to that of the devices with stress-free SiNx passivation. These results confirm the substantial potential of the SiNx stress-engineered technique for high-frequency and high-output power applications, which are crucial for future communication systems.

Funder

National Natural Science Foundation of China

Research on High-reliable GaN Power Device and the Related Industrial Power System

Study on the Reliability of GaN Power Devices

Research on Mechanism of Source/Drain Ohmic Contact and the Related GaN p-FET

Research on the Key Technology of 1200V SiC MOSFETs

5G Frontier Project (Phase III)—Micro-Nano Processing Platform

High Level of Special Funds

Research on Novelty Low-resistance Source/Drain Ohmic Contact for GaN p-FET

Publisher

MDPI AG

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