8.7 W/mm output power density and 42% power-added-efficiency at 30 GHz for AlGaN/GaN HEMTs using Si-rich SiN passivation interlayer-Reference-Cited by-同舟云学术

8.7 W/mm output power density and 42% power-added-efficiency at 30 GHz for AlGaN/GaN HEMTs using Si-rich SiN passivation interlayer

Published:2022-01-31 Issue:5 Volume:120 Page:052101
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Liu Jie-Long¹^ORCID,Zhu Jie-Jie²^ORCID,Mi Min-Han²³^ORCID,Zhu Qing²^ORCID,Liu Si-Yu²^ORCID,Wang Peng-Fei²^ORCID,Zhou Yu-Wei¹^ORCID,Zhao Zi-Yue¹,Zhou Jiu-Ding²,Zhang Meng²,Wu Mei²^ORCID,Hou Bin²^ORCID,Wang Hong²,Yang Ling²^ORCID,Ma Xiao-Hua²,Hao Yue²

Affiliation:

1. School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, People's Republic of China

2. State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, People's Republic of China

3. Guangzhou Institute of Technology, Xidian University, Guangzhou 510555, People's Republic of China

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

China Postdoctoral Science Foundation

fundamental research founds for the central universities

key research and development program of guangzhou

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0080120

Reference26 articles.

1. Gate-recessed AlGaN-GaN HEMTs for high-performance millimeter-wave applications

2. An insulator-lined silicon substrate-via technology with high aspect ratio

3. Y. F. Wu , M. Moore , A. Saxler , T. Wisleder , U. K. Mishra , and P. Parikh , in IEEE International Electron Devices Meeting (IEDM) ( IEEE, 2005), p. 583.

4. N. Estella , E. Camargo , J. Schellenberg , and L. Bui , in IEEE MTT-S International Microwave Symposium (IMS) ( IEEE, 2019), p. 568.

5. High-power AlGaN/GaN HEMTs for Ka-band applications

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