Millimeter-Wave AlGaN/GaN MIS-HEMTs with Multiple T-Gate Technology
Author:
Affiliation:
1. Hubei Jiufengshan Laboratory,Wuhan,China,430070
2. Xidian University,State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology,Xi'an,China,710071
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10363774/10363775/10364256.pdf?arnumber=10364256
Reference6 articles.
1. Ultrahigh-Speed GaN High-Electron-Mobility Transistors With $f_{T}/f_{\mathrm {max}}$ of 454/444 GHz
2. High-voltage Millimeter-Wave GaN HEMTs with 13.7 W/mm Power Density
3. N-Polar GaN-on-Sapphire Deep Recess HEMTs With High W-Band Power Density
4. Improved Power Performance and the Mechanism of AlGaN/GaN HEMTs Using Si-Rich SiN/Si3N4 Bilayer Passivation
5. 8.7 W/mm output power density and 42% power-added-efficiency at 30 GHz for AlGaN/GaN HEMTs using Si-rich SiN passivation interlayer
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