High-voltage Millimeter-Wave GaN HEMTs with 13.7 W/mm Power Density-Reference-Cited by-同舟云学术

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High-voltage Millimeter-Wave GaN HEMTs with 13.7 W/mm Power Density

Published:2007-12 Issue: Volume: Page:
ISSN:
Container-title:2007 IEEE International Electron Devices Meeting
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Author:

Wu Y.-F.,Moore M.,Abrahamsen A.,Jacob-Mitos M.,Parikh P.,Heikman S.,Burk A.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4418847/4418848/04418958.pdf?arnumber=4418958

Cited by 34 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ka Band GaN MIS-HEMT with ALD-SiN Gate Dielectric and Lp-SiN Passivation Layer;2024 IEEE/MTT-S International Microwave Symposium - IMS 2024;2024-06-16

2. Millimeter-Wave AlGaN/GaN MIS-HEMTs with Multiple T-Gate Technology;2023 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA);2023-10-27

3. 2.2 W/mm at 94 GHz in AlN/GaN/AlN High‐Electron‐Mobility Transistors on SiC;physica status solidi (a);2023-01-27

4. Over 10W/mm High Power Density AlGaN/GaN HEMTs With Small Gate Length by the Stepper Lithography for Ka-Band Applications;IEEE Journal of the Electron Devices Society;2023

5. TCAD-Based Investigation of the Electrical Characteristics of Normally off p-GaN Passivated GaN HEMTs;2022 International Conference on IC Design and Technology (ICICDT);2022-09-21

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