TCAD-Based Investigation of the Electrical Characteristics of Normally off p-GaN Passivated GaN HEMTs-Reference-Cited by-同舟云学术

TCAD-Based Investigation of the Electrical Characteristics of Normally off p-GaN Passivated GaN HEMTs

Published:2022-09-21 Issue: Volume: Page:
ISSN:
Container-title:2022 International Conference on IC Design and Technology (ICICDT)
language:
Short-container-title:

Author:

Wang Yubo¹,Li Fan¹,Chi Xuan¹,Liu Wen¹,Yu Guohao²,Du Zhongkai³,Zhang Baoshun²

Affiliation:

1. Xi'an Jiaotong-Liverpool University,School of Advanced Technology,Suzhou,China,215123

2. University of Science and Technology of China,School of Nano-Tech and Nano-Bionics,Hefei,China,230026

3. Suzhou Powerhouse Electronics Co., Ltd,Suzhou,China,215123

Funder

Youth Innovation Promotion Association

National Natural Science Foundation of China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9933043/9933065/09933128.pdf?arnumber=9933128

Reference13 articles.

1. Breakdown Enhancement and Current Collapse Suppression by High-Resistivity GaN Cap Layer in Normally-Off AlGaN/GaN HEMTs

2. Diagnosis of trapping phenomena in GaN MESFETs

3. Observation of deep traps responsible for current collapse in GaN metal–semiconductor field-effect transistors

4. Trap effects studies in GaN MESFETs by pulsed measurements

5. Normally-off AlGaN/GaN HFET with p-type GaN Gate and AlGaN buffer;hilt;2009 21st International Symposium on Power Semiconductor Devices & IC's ISPSD,2010

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation on the Dynamic Characteristics of Hydrogen Plasma Treated p-GaN HEMTs Circuit Using ASM-GaN Model;IEEE Journal of the Electron Devices Society;2024