Investigation on the Dynamic Characteristics of Hydrogen Plasma Treated p-GaN HEMTs Circuit Using ASM-GaN Model-Reference-Cited by-同舟云学术

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Investigation on the Dynamic Characteristics of Hydrogen Plasma Treated p-GaN HEMTs Circuit Using ASM-GaN Model

Published:2024 Issue: Volume:12 Page:457-463
ISSN:2168-6734
Container-title:IEEE Journal of the Electron Devices Society
language:
Short-container-title:IEEE J. Electron Devices Soc.

Author:

Li Fan¹^ORCID,Wu Shiqiang¹^ORCID,Li Ang¹^ORCID,Zhu Yuhao¹^ORCID,Cui Miao¹,Gu Jiangmin¹,Zhang Ping¹,Zhao Yinchao¹,Wen Huiqing¹^ORCID,Liu Wen¹^ORCID

Affiliation:

1. Department of Electrical and Electronic Engineering, Xi’an Jiaotong-Liverpool University, Suzhou, China

Funder

National Key Research and Development Program of China

Science and Technology Program of Suzhou

XJTLU Research Development Funding

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx8/6245494/10416702/10543269.pdf?arnumber=10543269

Reference25 articles.

1. Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges

2. Switching Time Characterization and Modeling of AlN/GaN MIS-HEMTs

3. A surface potential large signal model for AlGaN/GaN HEMTs

4. A SPICE-Compatible Equivalent-Circuit Model of Schottky Type p-GaN Gate Power HEMTs with Dynamic Threshold Voltage

5. An Accurate Compact Model for GaN Power Switches with the Physics-based ASM-HEMT Model

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