2.2 W/mm at 94 GHz in AlN/GaN/AlN High‐Electron‐Mobility Transistors on SiC

Author:

Hickman Austin1ORCID,Chaudhuri Reet1,Li Lei1,Nomoto Kazuki1,Moser Neil2,Elliott Michael2,Guidry Matthew3,Shinohara Keisuke4,Hwang James C. M.5,Xing Huili Grace156,Jena Debdeep156

Affiliation:

1. Electrical and Computer Engineering Cornell University Ithaca NY 14853 USA

2. Wright-Patterson Air Force Base Dayton OH 45433 USA

3. U.C. Santa Barbara Santa Barbara CA 93106 USA

4. Teledyne Scientific and Imaging Thousand Oaks CA 91360 USA

5. Material Science and Engineering Cornell University Ithaca NY 14853 USA

6. Kavli Institute Cornell University Ithaca NY 14853 USA

Abstract

Aluminum nitride (AlN) offers novel potential for electronic integration and performance benefits for high‐power, millimeter‐wave amplification. Herein, load‐pull power performance at 30 and 94 GHz for AlN/GaN/AlN high‐electron‐mobility transistors (HEMTs) on silicon carbide (SiC) is reported. When tuned for peak power‐added efficiency (PAE), the reported AlN/GaN/AlN HEMT shows PAE of 25% and 15%, with associated output power () of 2.5 and 1.7 W mm−1, at 30 and 94 GHz, respectively. At 94 GHz, the maximum generated is 2.2 W mm−1, with associated PAE of 13%.

Funder

Semiconductor Research Corporation

Air Force Office of Scientific Research

National Science Foundation

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference23 articles.

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3. W-Band Power Performance of SiN-Passivated N-Polar GaN Deep Recess HEMTs

4. Ultrathin Body GaN-on-Insulator Quantum Well FETs With Regrown Ohmic Contacts

5. High Breakdown Voltage in RF AlN/GaN/AlN Quantum Well HEMTs

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