Surface passivation effects on AlGaN/GaN high-electron-mobility transistors with SiO2, Si3N4, and silicon oxynitride
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1642276
Reference12 articles.
1. An AlGaN/GaN high-electron-mobility transistor with an AlN sub-buffer layer
2. Comparative study of drain-current collapse in AlGaN/GaN high-electron-mobility transistors on sapphire and semi-insulating SiC
3. Investigations of SiO2/n-GaN and Si3N4/n-GaN insulator–semiconductor interfaces with low interface state density
4. The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs
5. A comparative study of surface passivation on AlGaN/GaN HEMTs
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