Comparative study of drain-current collapse in AlGaN/GaN high-electron-mobility transistors on sapphire and semi-insulating SiC
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1512820
Reference14 articles.
1. Compression of the dc drain current by electron trapping in AlGaN/GaN modulation doped field-effect transistors
2. Trapping effects and microwave power performance in AlGaN/GaN HEMTs
3. Trap effects studies in GaN MESFETs by pulsed measurements
4. Drain current compression in GaN MODFETs under large-signal modulation at microwave frequencies
5. Observation of deep traps responsible for current collapse in GaN metal–semiconductor field-effect transistors
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