Dynamic Behavior of Threshold Voltage and I D–V DS Kink in AlGaN/GaN HEMTs Due to Poole

Dynamic Behavior of Threshold Voltage and I _D–V _DS Kink in AlGaN/GaN HEMTs Due to Poole–Frenkel Effect

Published:2023-12 Issue:12 Volume:70 Page:6256-6261
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Gao Zhan¹^ORCID,De Santi Carlo¹^ORCID,Rampazzo Fabiana¹,Saro Marco¹^ORCID,Fornasier Mirko¹^ORCID,Meneghesso Gaudenzio¹^ORCID,Meneghini Matteo²^ORCID,Chini Alessandro³^ORCID,Verzellesi Giovanni⁴^ORCID,Zanoni Enrico¹^ORCID

Affiliation:

1. Department of Information Engineering, University of Padova, Padua, Italy

2. Department of Information Engineering and the Department of Physics and Astronomy, University of Padova, Padua, Italy

3. Department of Engineering “Enzo Ferrari,”, University of Modena and Reggio Emilia, Modena, Italy

4. Department of Sciences and Methods for Engineering, University of Modena and Reggio Emilia, Modena, Italy

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10328902/10302314.pdf?arnumber=10302314

Reference41 articles.

1. “Leaky Dielectric” Model for the Suppression of Dynamic $R_{\mathrm{ON}}$ in Carbon-Doped AlGaN/GaN HEMTs

2. Deep Trap Characterization and the Kink Effect in AlGaN/GaN HEMTs

3. Kink Effect in AlGaN/GaN HEMTs Induced by Drain and Gate Pumping

4. The interplay of thermal, time and Poole-Frenkel emission on the trap-based physical modeling of GaN HEMT drain characteristics

5. Origin of kink effect in AlGaN/GaN high electron mobility transistors: Yellow luminescence and Fe doping