Origin of kink effect in AlGaN/GaN high electron mobility transistors: Yellow luminescence and Fe doping
Author:
Funder
Office of Naval Research
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4757993
Reference17 articles.
1. Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives
2. The Kink Effect at Cryogenic Temperatures in Deep Submicron AlGaN/GaN HEMTs
3. Impact ionization in high performance AlGaN/GaN HEMTs
4. Anomalous Kink Effect in GaN High Electron Mobility Transistors
5. Correlation between kink and cathodoluminescence spectra in AlGaN/GaN high electron mobility transistors
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1. Dynamic Behavior of Threshold Voltage and I D–V DS Kink in AlGaN/GaN HEMTs Due to Poole–Frenkel Effect;IEEE Transactions on Electron Devices;2023-12
2. On the Onset of Breakdown of the Virtual Gate in AlGaN/GaN HEMTs;IEEE Transactions on Electron Devices;2022-07
3. Dynamic self-stabilization in the electronic and nanomechanical properties of an organic polymer semiconductor;Nature Communications;2022-06-02
4. The Effect of Heavy Fe-Doping on 3D Growth Mode and Fe Diffusion in GaN for High Power HEMT Application;Materials;2022-03-10
5. Suitability of thin-GaN for AlGaN/GaN HEMT material and device;Journal of Materials Science;2022-03
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