An AlGaN/GaN high-electron-mobility transistor with an AlN sub-buffer layer
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Reference7 articles.
1. Undoped AlGaN/GaN HEMTs for microwave power amplification
2. AlGaN/GaN heterostructures on insulating AlGaN nucleation layers
3. Influence of barrier thickness on the high-power performance of AlGaN/GaN HEMTs
4. The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs
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2. Experimental demonstration of a two-dimensional hole gas in a GaN/AlGaN/GaN based heterostructure by optical spectroscopy;Physical Review B;2024-03-01
3. Development of Diamond Device-Level Heat Spreader for the Advancement of GaN HEMT Power and RF Electronics;IEEE Transactions on Device and Materials Reliability;2023-12
4. Recess-Patterned Ohmic Contact Technology for AlGaN/GaN Heterostructures;2023 IEEE 15th International Conference on ASIC (ASICON);2023-10-24
5. Structural, electrical, morphological, and interfacial characteristics of lattice-matched InAlN/GaN HEMT structure on SiC substrate;Journal of Applied Physics;2023-10-09
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