Recess-Patterned Ohmic Contact Technology for AlGaN/GaN Heterostructures
Author:
Affiliation:
1. Southern University of Science and Technology,School of Microelectronics,Shenzhen,China
2. Maxscend Microelectronics Company Limited,Wuxi,China
Funder
National Natural Science Foundation of China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10395907/10395930/10396123.pdf?arnumber=10396123
Reference22 articles.
1. AlGaN/GaN HEMTs-an overview of device operation and applications
2. Recessed-gate structure approach toward normally off high-Voltage AlGaN/GaN HEMT for power electronics applications
3. GaN-Based RF Power Devices and Amplifiers
4. A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs
5. Kilovolt AlGaN/GaN HEMTs as Switching Devices
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