Investigations of SiO2/n-GaN and Si3N4/n-GaN insulator–semiconductor interfaces with low interface state density
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.122009
Reference10 articles.
1. High-power microwave 0.25-μm gate doped-channel GaN/AlGaN heterostructure field effect transistor
2. Emerging gallium nitride based devices
3. Characteristics of InGaN/AlGaN light-emitting diodes on sapphire substrates
4. Pd/GaN Schottky Diode with a Barrier Height of 1.5 eV and a Reasonably Effective Richardson Coefficient
5. Low interface trap density for remote plasma deposited SiO2 on n‐type GaN
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