Change of chemical bonding properties at SiNx/GaN/AlGaN interface with SiH4 flow rate and its impact on the carrier transport properties of MIS-diodes
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Published:2024-09
Issue:
Volume:307
Page:117503
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ISSN:0921-5107
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Container-title:Materials Science and Engineering: B
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language:en
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Short-container-title:Materials Science and Engineering: B
Author:
Dalapati PradipORCID,
Arulkumaran Subramaniam,
Mani Dinesh,
Li Hanchao,
Xie Hanlin,
Wang Yue,
Ng Geok Ing
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