Author:
Gamarra Piero,Lacam Cedric,Tordjman Maurice,Medjdoub Farid,di Forte-Poisson Marie-Antoinette
Funder
French National Research Agency (ANR)
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference18 articles.
1. Quaternary barrier InAlGaN HEMTs With fT/fmax of 230/300GHz;Wang;IEEE Electron Device Lett.,2013
2. Y. Niida et al., 3.6W/mm high power density W-band InAlGaN/GaN HEMT MMIC power amplifier, in: Proceedings of the IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications (PAWR), Austin, TX, 2016, pp. 24–26., 〈http://dx.doi.org/10.1109/PAWR.2016.7440153〉
3. ICP-CVD SiN Passivation for High-Power RF InAlGaN/GaN/SiC HEMT;Aubry;IEEE Electron Device Lett.,2016
4. High electron mobility in high-polarization sub-10nm barrier thickness InAlGaN/GaN heterostructure;Medjdoub;Appl. Phys. Express,2015
5. Thermal oxidation of lattice matched InAlN/GaN heterostructures;Alomari;Phys. Status Solidi C,2010
Cited by
12 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献