Author:
Velikovskiy L E,Sim P E,Demchenko O I,Kurbanova N E,Filippov I A,Sakharov A V,Lundin W V,Zavarin E E,Zakheim D A,Arteev D S,Yagovkina M A,Tsatsulnikov A F
Abstract
Abstract
High electron mobility transistors (HEMTs) technologies based on AlGaN/GaN and InAlN/GaN heterostructures have been developed. The research focused on influence of epitaxial growth conditions and buffer doping profiles on electrical properties HEMTs. An output power density of 4W/mm at 17 GHz was demonstrated for InAlN/GaN HEMTs and 7W/mm at 10 GHz for AlGaN/GaN HEMTs.
Cited by
4 articles.
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