InAlN Barrier Scaled Devices for Very High $f_{T}$ and for Low-Voltage RF Applications-Reference-Cited by-同舟云学术

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InAlN Barrier Scaled Devices for Very High $f_{T}$ and for Low-Voltage RF Applications

Published:2013-10 Issue:10 Volume:60 Page:3099-3104
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Saunier Paul,Schuette Michael L.,Chou Tso-Min,Tserng Hua-Quen,Ketterson Andrew,Beam Edward,Pilla Manyam,Gao Xiang

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/6605590/06589143.pdf?arnumber=6589143

Cited by 36 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. InAlN/GaN MISHEMTs With 120 nm T-Shape Recessed Gates on Silicon With Excellent mm-Wave Noise Performance;IEEE Microwave and Wireless Technology Letters;2024-04

2. Influence of Transverse Geometry of Sidewall Gates on Characteristics of AlGaN/GaN Fin-HEMTs;IEEE Transactions on Electron Devices;2024-03

3. Challenges and Future Trends;GaN Technology;2024

4. A review of GaN RF devices and power amplifiers for 5G communication applications;Fundamental Research;2023-11

5. W-Band Graded-Channel GaN HEMTs With Record 45% Power-Added-Efficiency at 94 GHz;IEEE Microwave and Wireless Technology Letters;2023-02

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