Low-Voltage Operation AlInN/GaN HEMTs on Si with High Output Power at sub-6 GHz-Reference-Cited by-同舟云学术

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Low-Voltage Operation AlInN/GaN HEMTs on Si with High Output Power at sub-6 GHz

Published:2023-06-11 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE/MTT-S International Microwave Symposium - IMS 2023
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Author:

Takeuchi Katsuhiko¹,Saruta Kunihiko¹,Morita Shinya¹,Matsumoto Katsuji¹,Yanagita Masashi¹,Taniguchi Satoshi¹,Wada Shinichi¹,Tasai Kunihiko¹,Shimada Masayuki¹,Yanashima Katsunori¹

Affiliation:

1. Sony Semiconductor Solutions Corporation,Analog LSI Business Division,Japan

Funder

National Institute for Materials Science

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10187888/10187785/10188112.pdf?arnumber=10188112

Reference12 articles.

1. Channel Thickness Impact on the Small- and Large-Signal RF Performance of GaN HEMTs on Si with a cGaN Back-Barrier

2. Analysis of Low Voltage RF Power Capability on AlGaN/GaN and InAlN/GaN HEMTs for Terminal Applications

3. High performance millimeter-wave InAlN/GaN HEMT for low voltage RF applications via regrown Ohmic contact with contact ledge structure

4. Advances in Research on 300mm gallium nitride-on-Si (111) NMOS transistor and silicon CMOS integration;then;Electron Devices Meeting 2020 International,2022

5. Direct observation of nanometer-scale gate leakage paths in AlGaN/GaN and InAlN/AlN/GaN HEMT structures

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