High performance millimeter-wave InAlN/GaN HEMT for low voltage RF applications via regrown Ohmic contact with contact ledge structure-Reference-Cited by-同舟云学术

High performance millimeter-wave InAlN/GaN HEMT for low voltage RF applications via regrown Ohmic contact with contact ledge structure

Published:2022-02-07 Issue:6 Volume:120 Page:062104
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Zhou Yuwei¹^ORCID,Mi Minhan²^ORCID,Yang Mei¹^ORCID,Han Yutong²,Wang Pengfei²^ORCID,Chen Yilin¹^ORCID,Liu Jielong¹,Gong Can²,Lu Yiwei²,Zhang Meng²,Zhu Qing²^ORCID,Ma Xiaohua²,Hao Yue²

Affiliation:

1. School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China

2. School of Microelectronics, Xidian University, Xi'an 710071, China

Funder

National Key R&D Program of China

National Natural Science Foundation of China

China Postdoctoral Science Foundation

Key R&D Program of Guangzhou

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0079359

Reference19 articles.

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2. K. Osawa , H. Yoshikoshi , A. Nitta , T. Tanaka , E. Mitani , and T. Satoh , in 46th European Microwave Conference ( IEEE, 2016), pp. 397–400.

3. InAlN Barrier Scaled Devices for Very High $f_{T}$ and for Low-Voltage RF Applications

4. H. W. Then , L. A. Chow , S. Dasgupta , S. Gardner , M. Radosavljevic , V. R. Rao , S. H. Sung , G. Yang , and R. S. Chau , in Symposium on VLSI Technology ( IEEE, 2015), pp. T202–T203.

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