2DEG-Concentration-Modulated High-Power-Density AlGaN/GaN RF HEMTs-Reference-Cited by-同舟云学术

2DEG-Concentration-Modulated High-Power-Density AlGaN/GaN RF HEMTs

Published:2024-07 Issue:7 Volume:45 Page:1157-1160
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Zhang Haochen¹^ORCID,Wang Hu¹,Zhang Mingshuo¹^ORCID,Yang Lei¹^ORCID,Ye Yankai¹,Qian Hongtu²^ORCID,Zhang Xinchuan¹,Zuo Chengjie¹^ORCID,Yang Yansong³^ORCID,Pei Yi²^ORCID,Sun Haiding¹^ORCID

Affiliation:

1. iGaN Laboratory, School of Microelectronics, University of Science and Technology of China, Hefei, China

2. Dynax Semiconductor, Inc., Suzhou, China

3. Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Kowloon, Hong Kong

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

University of Science and Technology of China (USTC) Center for Micro and Nanoscale Research and Fabrication

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/55/10577506/10534034.pdf?arnumber=10534034

Reference30 articles.

1. Compositionally graded III-nitride alloys: building blocks for efficient ultraviolet optoelectronics and power electronics

2. 30-W/mm GaN HEMTs by Field Plate Optimization

3. Record Power Performance of 33.1 W/mm with 62.9% PAE at X-band and 14.4 W/mm at Ka-band from AlGaN/GaN/AlN:Fe Heterostucture

4. 11.2 W/mm power density AlGaN/GaN high electron-mobility transistors on a GaN substrate

5. AlN/GaN/InGaN Coupling-Channel HEMTs for Improved g m and Gain Linearity

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1. Structural and Electrical Characteristics of GaN HEMTs With In Situ SiN_x Gate Dielectrics Grown by Rationally Modulated N₂/H₂ Carrier Gas;IEEE Transactions on Electron Devices;2024-08

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