3.6 W/mm high power density W-band InAlGaN/GaN HEMT MMIC power amplifier-Reference-Cited by-同舟云学术

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3.6 W/mm high power density W-band InAlGaN/GaN HEMT MMIC power amplifier

Published:2016-01 Issue: Volume: Page:
ISSN:
Container-title:2016 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications (PAWR)
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Author:

Niida Yoshitaka,Kamada Yoichi,Ohki Toshihiro,Ozaki Shiro,Makiyama Kozo,Minoura Yuichi,Okamoto Naoya,Sato Masaru,Joshin Kazukiyo,Watanabe Keiji

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7440113/7440114/7440153.pdf?arnumber=7440153

Cited by 48 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Reliability Assessment of On-Wafer AlGaN/GaN HEMTs: The Impact of Electric Field Stress on the Mean Time to Failure;Micromachines;2023-09-26

2. A 63-73 GHz GaN Power Amplifier with a Compact Power Combiner;2023 18th European Microwave Integrated Circuits Conference (EuMIC);2023-09-18

3. E-band Downlink GaN PA with a Homogeneous Output Power of 2.7W and a Peak PAE of 32.3%;2023 18th European Microwave Integrated Circuits Conference (EuMIC);2023-09-18

4. High-power Density W-band MMIC Amplifiers using Graded-channel GaN HEMTs;2023 IEEE/MTT-S International Microwave Symposium - IMS 2023;2023-06-11

5. 2.6- and 4-W E-Band GaN Power Amplifiers With a Peak Efficiency of 22% and 15.3%;IEEE Microwave and Wireless Technology Letters;2023-06

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