High electron mobility in high-polarization sub-10 nm barrier thickness InAlGaN/GaN heterostructure-Reference-Cited by-同舟云学术

High electron mobility in high-polarization sub-10 nm barrier thickness InAlGaN/GaN heterostructure

Published:2015-09-16 Issue:10 Volume:8 Page:101001
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Medjdoub Farid,Kabouche Riad,Linge Astrid,Grimbert Bertrand,Zegaoui Malek,Gamarra Piero,Lacam Cédric,Tordjman Maurice,di Forte-Poisson Marie-Antoinette

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/8/i=10/a=101001/pdf

Reference25 articles.

1. Short-Channel Effect Limitations on High-Frequency Operation of AlGaN/GaN HEMTs for T-Gate Devices

2. Gate-Recessed Enhancement-Mode InAlN/AlN/GaN HEMTs With 1.9-A/mm Drain Current Density and 800-mS/mm Transconductance

3. InAlN - A new barrier material for GaN-based HEMTs

4. Record Combination of Power-Gain Cut-Off Frequency and Three-Terminal Breakdown Voltage for GaN-on-Silicon Devices

5. Demonstration of undoped quaternary AlInGaN∕GaN heterostructure field-effect transistor on sapphire substrate

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