GaN-Based Lateral and Vertical Devices-Reference-Cited by-同舟云学术

GaN-Based Lateral and Vertical Devices

Published:2022-11-11 Issue: Volume: Page:525-578
ISSN:2522-8692
Container-title:Springer Handbook of Semiconductor Devices
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Author:

Meneghini Matteo^ORCID,Chowdhury Srabanti,Derluyn Joff,Medjdoub Farid,Ji Dong,Chun Jaeyi^ORCID,Kabouche Riad,De Santi Carlo,Zanoni Enrico,Meneghesso Gaudenzio

Publisher

Springer International Publishing

Link

https://link.springer.com/content/pdf/10.1007/978-3-030-79827-7_15

Reference168 articles.

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3. Ambacher, O., et al.: Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped {AlGaN/GaN} heterostructures. J. Appl. Phys. 87(1), 334–344 (2000)

4. Ueda, T., Ishida, M., Masaaki, Y.: Separation of thin GaN from sapphire by laser lift-off technique. Jpn. J. Appl. Phys. 50(4R) (2011)

5. El-Masry, N., Piner, E., Liu, S.X.: Phase separation in InGaN grown by metalorganic chemical vapor deposition. Appl. Phys. Lett. 72(40) (1998)

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