Pd/GaN Schottky Diode with a Barrier Height of 1.5 eV and a Reasonably Effective Richardson Coefficient-Reference-Cited by-同舟云学术

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Pd/GaN Schottky Diode with a Barrier Height of 1.5 eV and a Reasonably Effective Richardson Coefficient

Published:1998-01-15 Issue:Part 2, No. 1A/B Volume:37 Page:L7-L9
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Ishikawa Hiroyasu,Nakamura Kouichi,Egawa Takashi,Jimbo Takashi,Umeno Masayoshi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 26 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. Ultraviolet light induced electrical hysteresis effect in graphene-GaN heterojunction;Applied Physics Letters;2019-04-15

3. Group-III Sesquioxides: Growth, Physical Properties and Devices;Advanced Electronic Materials;2017-07-04

4. GaN Schottky Barrier Diodes on Free-Standing GaN Wafer;ECS Journal of Solid State Science and Technology;2017

5. GaN Nanostructure-Based Light Emitting Diodes and Semiconductor Lasers;Journal of Nanoscience and Nanotechnology;2014-02-01

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