Thermal Annealing Effects on I-V-T Characteristics of Pd/Ge/Ti/Pt/Au-Si-Gaas Contact at High Temperatures

Author:

Liu Kang,Hu Long,Dang Xin,Li Xin,Liu Weihua,Han Chuan Yu

Publisher

Elsevier BV

Subject

General Earth and Planetary Sciences,General Environmental Science

Reference41 articles.

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3. Longevity improvement of optically activated, high gain GaAs photoconductive semiconductor switches;A Mar;Conference Record of the 2000 Twenty-Fourth International,2000

4. GaAs devices with vertical and planar structures for optically activated high-voltage switching;E Bertolucci;Nuclear Instruments & Methods in Physics Research,1998

5. An improved Au/Ge/Ni ohmic contact to n-type GaAs;R A Bruce;Solid State Electronics,1987

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