GaAs devices with vertical and planar structures for optically activated high-voltage switching-Reference-Cited by-同舟云学术

GaAs devices with vertical and planar structures for optically activated high-voltage switching

Published:1998-11 Issue:1 Volume:417 Page:124-130
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Bertolucci E,Conti M,Mettivier G,Russo P,Bisogni M.G,Bottigli U,Fantacci M.E,Stefanini A,Cola A,Quaranta F,Vasanelli L,Stefanini G

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference4 articles.

1. High‐power switching with picosecond precision

2. Optically Activated Switching I, II, III, IV. SPIE Proc. 1378 (1990); 1362 (1992); 1873 (1993); 2343 (1995).

3. Development of Semi-Insulating detectors for Digital Radiography;Bertolucci;Nucl. Phys. B (Proc. Suppl.),1998

4. A. Cola, F. Quaranta, L. Vasanelli, E. Bertolucci, M. Conti, P. Russo, G. Bisogni, U. Bottigli, M.E. Fantacci, A. Stefanini, R. Fucci, G. Melone, R. Rossi, G. Stefanini, Optically activated planar GaAs switches for dc applications, Nucl. Instr. Meth. A, [in press.]

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