Low interface trap density for remote plasma deposited SiO2 on n‐type GaN-Reference-Cited by-同舟云学术

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Low interface trap density for remote plasma deposited SiO2 on n‐type GaN

Published:1996-03-25 Issue:13 Volume:68 Page:1850-1852
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Casey H. C.,Fountain G. G.,Alley R. G.,Keller B. P.,DenBaars Steven P.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.116034

Reference19 articles.

Cited by 170 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Reliability of Quasi-vertical GaN on Silicon Schottky Barrier Diodes With SiO₂ Passivation Layer Under On-State Stress Bias;IEEE Transactions on Electron Devices;2024-09

2. Communication—A Powerful Method to Improve Dielectric/GaN Interface Properties: A Dummy SiO₂ Process;ECS Journal of Solid State Science and Technology;2024-08-01

3. Impacts of post-deposition annealing on hole trap generation at SiO₂/p-type GaN MOS interfaces;Applied Physics Express;2024-08-01

4. Interface states modulation in Pt/Graphene/GaN Schottky barrier diodes;Materials Science in Semiconductor Processing;2024-07

5. Theoretical study of the influence of GaOx interfacial layer on the GaN/SiO2 interface property;Journal of Applied Physics;2024-05-01

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