Reliability of Quasi-vertical GaN on Silicon Schottky Barrier Diodes With SiO₂ Passivation Layer Under On-State Stress Bias-Reference-Cited by-同舟云学术

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Reliability of Quasi-vertical GaN on Silicon Schottky Barrier Diodes With SiO₂ Passivation Layer Under On-State Stress Bias

Published:2024-09 Issue:9 Volume:71 Page:5296-5304
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Lin Ya-Xun¹^ORCID,Chao Der-Sheng²^ORCID,Liang Jenq-Horng³,Shen Yao-Luen⁴,Huang Chih-Fang⁴^ORCID,Hall Steve¹^ORCID,Mitrovic Ivona Z.¹^ORCID

Affiliation:

1. Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool, U.K.

2. Nuclear Science and Technology Development Center, National Tsing Hua University, Hsinchu, Taiwan

3. Department of Engineering and System Science and the Institute of Nuclear Engineering and Science, National Tsing Hua University, Hsinchu, Taiwan

4. Institute of Electronics Engineering, National Tsing Hua University, Hsinchu, Taiwan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx8/16/10645717/10632095.pdf?arnumber=10632095

Reference39 articles.

1. Properties and Advantages of Gallium Nitride

2. Performance and V TH Stability in E-Mode GaN Fully Recessed MIS-FETs and Partially Recessed MIS-HEMTs With LPCVD-SiN x /PECVD-SiN x Gate Dielectric Stack

3. Bias Temperature Instability of Normally-Off GaN MIS-FET with Low-Pressure Chemical Vapor Deposition SiN x Gate Dielectric

4. Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs

5. Unified Mechanism for Positive- and Negative-Bias Temperature Instability in GaN MOSFETs

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