Characterization of dislocations induced by Vickers indentation in GaN for explaining size ratios of dislocation patterns
Author:
Funder
JSPS
Publisher
Springer Science and Business Media LLC
Link
https://link.springer.com/content/pdf/10.1007/s10853-024-09392-z.pdf
Reference44 articles.
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2. Ueda T (2019) GaN power devices: current status and future challenges. Jpn J Appl Phys 58:SC0804-1-SC0804-9. https://doi.org/10.7567/1347-4065/ab12c9
3. Amano H, Baines Y, Beam E et al (2018) The 2018 GaN power electronics roadmap. J Phys D Appl Phys 51:163001-1–163001-48. https://doi.org/10.1088/1361-6463/aaaf9d
4. Hsu JWP, Manfra MJ, Lang DV, Richter S, Chu SNG, Sergent AM, Kleiman RN, Pfeiffer LN, Molnar RJ (2001) Inhomogeneous spatial distribution of reverse bias leakage in GaN Schottky diodes. Appl Phys Lett 78:1685–1687. https://doi.org/10.1063/1.1356450
5. Sang L, Ren B, Sumiya M, Liao M, Koide Y, Tanaka A, Cho Y, Harada Y, Nabatame T, Sekiguchi T, Usami S, Honda Y, Amano H (2017) Initial leakage current paths in the vertical-type GaN-on-GaN Schottky barrier diodes. Appl Phys Lett 111:122102-1–122102-5. https://doi.org/10.1063/1.4994627
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