Fabrication and performance of GaN electronic devices
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,General Materials Science
Reference306 articles.
1. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
2. Wide bandgap compound semiconductors for superior high-voltage unipolar power devices
3. High voltage (450 V) GaN Schottky rectifiers
4. Electron transport in AlGaN–GaN heterostructures grown on 6H–SiC substrates
5. Submillimeter wave responses in NbN/AlN/NbN tunnel junctions
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