Studying the effect of temperature and pressure on GaN crystals <i>via</i> the Na-flux method-Reference-Cited by-同舟云学术

Studying the effect of temperature and pressure on GaN crystals via the Na-flux method

Published:2024 Issue:24 Volume:26 Page:3176-3184
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Wang Benfa¹²,Liu Lei²,Tian Ge³,Wang Guodong²,Yu Jiaoxian⁴,Li Qiubo²,Sun Defu¹²,Xu Xiangang²,Zhang Lei¹²^ORCID,Wang Shouzhi¹²⁵^ORCID

Affiliation:

1. Shenzhen Research Institute, Shandong University, Shenzhen, 518000, P. R. China

2. Institute of Novel Semiconductors, State Key Lab of Crystal Materials, Shandong University, Jinan, 250100, P. R. China

3. School of Life Sciences, Shandong First Medical University & Shandong Academy of Medical Sciences, Taian, Shandong 271000, China

4. Key Laboratory of Processing and Testing Technology of Glass & Functional Ceramics of Shandong Province, School of Materials Science and Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250353, P. R. China

5. Suzhou Research Institute, Shandong University, Suzhou 215123, P. R. China

Abstract

GaN single crystals (15 × 15 mm) were epitaxially grown using the Na-flux method, and substrate self-peeling was achieved. The effect of temperature and pressure on the growth rate and the quality of GaN single crystals are investigated.

Funder

Natural Science Foundation of Jiangsu Province

National Natural Science Foundation of China

Shenzhen Science and Technology Innovation Program

Basic and Applied Basic Research Foundation of Guangdong Province

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/CE/D4CE00314D

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