Nearly ideal vertical GaN Schottky barrier diodes with ultralow turn-on voltage and on-resistance
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/10/i=5/a=051001/pdf
Reference21 articles.
1. High-voltage vertical GaN Schottky diode enabled by low-carbon metal-organic chemical vapor deposition growth
2. Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN p-n diodes with avalanche breakdown
3. Extremely Low On-Resistance and High Breakdown Voltage Observed in Vertical GaN Schottky Barrier Diodes with High-Mobility Drift Layers on Low-Dislocation-Density GaN Substrates
4. P-Channel InGaN/GaN heterostructure metal-oxide-semiconductor field effect transistor based on polarization-induced two-dimensional hole gas
5. Nearly Ideal Current–Voltage Characteristics of Schottky Barrier Diodes Formed on Hydride-Vapor-Phase-Epitaxy-Grown GaN Free-Standing Substrates
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1. Polarization-Enhanced GaN Schottky Barrier Diodes: Ultra-Thin InGaN for High Breakdown Voltage and Low Ron;IEEE Electron Device Letters;2024-07
2. Electrical characteristics and trap signatures for Schottky barrier diodes on 4H-SiC, GaN-on-GaN, AlGaN/GaN epitaxial substrates;Semiconductor Science and Technology;2024-05-21
3. A Review on Reverse-Bias Leakage Current Transport Mechanisms in Metal/GaN Schottky Diodes;Transactions on Electrical and Electronic Materials;2024-02-03
4. Vertical GaN-on-GaN Trench Junction Barrier Schottky Diodes With a Slanted Sidewall;IEEE Journal of the Electron Devices Society;2024
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