Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN p-n diodes with avalanche breakdown-Reference-Cited by-同舟云学术

Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN p-n diodes with avalanche breakdown

Published:2015-12-14 Issue:24 Volume:107 Page:243501
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Hu Zongyang¹²,Nomoto Kazuki¹²,Song Bo¹²,Zhu Mingda¹²,Qi Meng²^ORCID,Pan Ming³,Gao Xiang³,Protasenko Vladimir¹²,Jena Debdeep¹²⁴,Xing Huili Grace¹²⁴

Affiliation:

1. School of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14853, USA

2. Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USA

3. IQE RF LLC, Somerset, New Jersey 08873, USA

4. Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA

Funder

Advanced Research Projects Agency - Energy (ARPA-E)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.4937436

Reference19 articles.

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3. 1.9-kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon

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5. High Voltage Vertical GaN p-n Diodes With Avalanche Capability

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