High Responsivity of Zero-Power-Consumption Ultraviolet Photodetector Using 2D-MoS<sub>2</sub>/<i>i</i>-GaN Vertical Heterojunction-Reference-Cited by-同舟云学术

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High Responsivity of Zero-Power-Consumption Ultraviolet Photodetector Using 2D-MoS₂/i-GaN Vertical Heterojunction

Published:2023-11-08 Issue:12 Volume:10 Page:4408-4416
ISSN:2330-4022
Container-title:ACS Photonics
language:en
Short-container-title:ACS Photonics

Author:

Veeralingam Sushmitha¹²,Sang Liwen²^ORCID,Pang Hong²,Ma Renzhi²^ORCID,Badhulika Sushmee¹

Affiliation:

1. Department of Electrical Engineering, Indian Institute of Technology Hyderabad, Hyderabad, 502285, India

2. International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science,1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan

Funder

Ministry of Education, Culture, Sports, Science and Technology

Precursory Research for Embryonic Science and Technology

Indian Institute of Technology Hyderabad

Japan Society for the Promotion of Science

National Institute for Materials Science

Publisher

American Chemical Society (ACS)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Biotechnology,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsphotonics.3c01250

Reference31 articles.

1. A Comprehensive Review of Semiconductor Ultraviolet Photodetectors: From Thin Film to One-Dimensional Nanostructures

2. Arbitrary Multicolor Photodetection by Hetero-integrated Semiconductor Nanostructures

3. Boosting the doping efficiency of Mg in p-GaN grown on the free-standing GaN substrates

4. Vertical-Type Ni/GaN UV Photodetectors Fabricated on Free-Standing GaN Substrates

5. Vertical 1D/2D Heterojunction Architectures for Self-Powered Photodetection Application: GaN Nanorods Grown on Transition Metal Dichalcogenides

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1. Recent advances in layered and non-layered 2D materials for UV detection;Sensors and Actuators A: Physical;2024-11

2. Enhancing photo-response performance through ultrathin Al2O3 modification at the p-SnO2:Al/n-GaN heterojunction interface;Optical Materials;2024-10

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