Enhancing photo-response performance through ultrathin Al2O3 modification at the p-SnO2:Al/n-GaN heterojunction interface-Reference-Cited by-同舟云学术

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Enhancing photo-response performance through ultrathin Al2O3 modification at the p-SnO2:Al/n-GaN heterojunction interface

Published:2024-10 Issue: Volume:156 Page:115950
ISSN:0925-3467
Container-title:Optical Materials
language:en
Short-container-title:Optical Materials

Author:

Shi Hongyu,Deng Rui^ORCID,Jiang Dayong,Li Yongfeng

Funder

Education Department of Jilin Province

Publisher

Elsevier BV

Reference48 articles.

1. Highly sensitive ultraviolet photodetectors based on ZnO/SnO2 core-shell nanorod arrays

2. The growth and expansive applications of amorphous Ga₂O₃

3. Two-dimensional wide band-gap nitride semiconductor GaN and AlN materials: properties, fabrication and applications

4. Surface-modification of SnO2 nanoparticles by incorporation of Al for the detection of combustible gases in a humid atmosphere

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