Two-dimensional wide band-gap nitride semiconductor GaN and AlN materials: properties, fabrication and applications-Reference-Cited by-同舟云学术

Two-dimensional wide band-gap nitride semiconductor GaN and AlN materials: properties, fabrication and applications

Published:2021 Issue:48 Volume:9 Page:17201-17232
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Wang Zhongxin¹,Wang Guodong¹,Liu Xintong¹,Wang Shouzhi¹,Wang Tailin²,Zhang Shiying³,Yu Jiaoxian²,Zhao Gang⁴^ORCID,Zhang Lei¹^ORCID

Affiliation:

1. Institute of Novel Semiconductors, State Key laboratory of Crystal Material, Shandong University, Jinan, 250100, P. R. China

2. Key Laboratory of Processing and Testing Technology of Glass & Functional Ceramics of Shandong Province, School of Materials Science and Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250353, P. R. China

3. School of Science, Shandong Jianzhu University, Jinan 250101, P. R. China

4. Laboratory of Functional Micro–Nano Materials and Devices, School of Physics and Technology, University of Jinan, Jinan, 250100, P. R. China

Abstract

This review systematically summarizes the latest research progress in 2D GaN and 2D AlN structures, their properties, fabrication methods and applications.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Shandong Province

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/TC/D1TC04022G

Reference155 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. Van der Waals Epitaxy of III‐Nitride Semiconductors Based on 2D Materials for Flexible Applications

3. Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides

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