Exponential dependence of capture cross section on activation energy for interface traps in Al2O3/AlN/AlGaN/GaN metal-insulator-semiconductor heterostructures-Reference-Cited by-同舟云学术

Exponential dependence of capture cross section on activation energy for interface traps in Al2O3/AlN/AlGaN/GaN metal-insulator-semiconductor heterostructures

Published:2017-10-16 Issue:16 Volume:111 Page:163502
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Zhu Jiejie¹²^ORCID,Zhu Qing¹^ORCID,Chen Lixiang¹,Wu Mei²,Hou Bin¹^ORCID,Yang Ling¹²,Hao Yue²,Ma Xiaohua¹²

Affiliation:

1. School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, People's Republic of China

2. State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, Xidian University, Xi'an 710071, People's Republic of China

Funder

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4985592

Reference23 articles.

1. AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates

2. Improvement of $V_{\rm th}$ Instability in Normally-Off GaN MIS-HEMTs Employing ${\rm PEALD}\hbox{-}{\rm SiN}_{\rm x}$ as an Interfacial Layer

3. GaN-Based Metal-Insulator-Semiconductor High-Electron-Mobility Transistors Using Low-Pressure Chemical Vapor Deposition SiN_x as Gate Dielectric

4. Investigation of In Situ SiN as Gate Dielectric and Surface Passivation for GaN MISHEMTs

5. GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectric

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