GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectric
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1861122
Reference19 articles.
1. AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor
2. AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates
3. 7.5 kW/mm2 current switch using AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors on SiC substrates
4. Low-loss high power RF switching using multifinger AlGaN/GaN MOSHFETs
5. SiO/sub 2//AlGaN/InGaN/GaN MOSDHFETs
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