AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1290269
Reference7 articles.
1. Superior Pinch-Off Characteristics at 400°C in AlGaN/GaN Heterostructure Field Effect Transistors
2. GaN-AlxGa1−xN Heterostructures Deposition by Low Pressure Metalorganic Chemical Vapor Deposition for Metal Insulator Semiconductor Field Effect Transistor (Misfet) Devices
3. Current/voltage characteristic collapse in AlGaN/GaN heterostructure insulated gate field effect transistors at high drain bias
4. Effect of temperature on Ga2O3(Gd2O3)/GaN metal–oxide–semiconductor field-effect transistors
5. AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor
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