Author:
Simin G.,Hu X.,Ilinskaya N.,Kumar A.,Koudymov A.,Zhang J.,Asif Khan M.,Gaska R.,Shur M.S.
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Reference11 articles.
1. Gaska, R., Shur, M.S., and Khan, A.: ‘GaN-based HEMTs’, Manasreh, O., Yu, E., (Gordon & Breach to be published
2. High performance microwave power GaN/AlGaN MODFETs grown by RF-assisted MBE
3. Short-channel Al0.5Ga0.5N/GaN MODFETs with power density > 3 W/mm at 18 GHz
4. AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor
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