Effects of a GaN cap layer on admittance characteristics of AlGaN/GaN MIS structures-Reference-Cited by-同舟云学术

Effects of a GaN cap layer on admittance characteristics of AlGaN/GaN MIS structures

Published:2023-08-03 Issue:5 Volume:134 Page:
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:

Author:

Nishiguchi Kenya¹^ORCID,Nakata Ken¹,Nishiguchi Norihiko²^ORCID,Hashizume Tamotsu³^ORCID

Affiliation:

1. Transmission Devices Laboratory, Sumitomo Electric Industries, Ltd. 1 , Yokohama 244-8588, Japan

2. Asahikawa City University 2 , Asahikawa 079-8501, Japan

3. IMaSS, Nagoya University 3 , Nagoya 464-8601, Japan

Abstract

GaN caps are commonly used to reduce sheet charge modulation induced by AlGaN/GaN surface potential. However, the details on how GaN caps affect C–V and G–V characteristics are still unclear. In this paper, we report a difference between these characteristics with and without GaN caps, and we discovered a mechanism in which GaN caps act as quantum wells to affect the charging and discharging of interface states. Finally, we developed a numerical model to simulate admittance characteristics of AlGaN/GaN MIS structures with a GaN cap in high accuracy.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://pubs.aip.org/aip/jap/article-pdf/doi/10.1063/5.0156112/18072456/055702_1_5.0156112.pdf

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