Investigation of the interface state characteristics of the Al/Al2O3/Ge/p-Si heterostructure over a wide frequency range by capacitance and conductance measurements-Reference-Cited by-同舟云学术

Investigation of the interface state characteristics of the Al/Al2O3/Ge/p-Si heterostructure over a wide frequency range by capacitance and conductance measurements

Published:2024-02 Issue: Volume:170 Page:107951
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Akın Buket,Ulusoy Murat,Altındal Yerişkin Seçkin

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference85 articles.

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