Barrier inhomogeneities and electrical characteristics of Ti/4H-SiC Schottky rectifiers-Reference-Cited by-同舟云学术

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Barrier inhomogeneities and electrical characteristics of Ti/4H-SiC Schottky rectifiers

Published:1999-03 Issue:3 Volume:46 Page:449-455
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Defives D.,Noblanc O.,Dua C.,Brylinski C.,Barthula M.,Aubry-Fortuna V.,Meyer F.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx4/16/16167/00748861.pdf?arnumber=748861

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4. Direct barrier evaluation method for SiC devices with junction barrier Schottky structures demonstrated with quasi-continuous spacing variation;AIP Advances;2022-08-01

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