Two diodes model and illumination effect on the forward and reverse bias I–V and C–V characteristics of Au/PVA (Bi-doped)/n-Si photodiode at room temperature-Reference-Cited by-同舟云学术

Two diodes model and illumination effect on the forward and reverse bias I–V and C–V characteristics of Au/PVA (Bi-doped)/n-Si photodiode at room temperature

Published:2013-01 Issue:1 Volume:13 Page:53-59
ISSN:1567-1739
Container-title:Current Applied Physics
language:en
Short-container-title:Current Applied Physics

Author:

Demirezen S.,Altındal Ş.,Uslu İ.

Publisher

Elsevier BV

Subject

General Physics and Astronomy,General Materials Science

Reference40 articles.

1. Photovoltaic and interface state density properties of the Au/n-GaAs Schottky barrier solar cell

2. Effect of illumination and frequency on the capacitance spectroscopy and the relaxation process of p-ZnTe/n-CdMnTe/GaAs magnetic diode for photocapacitance applications

3. Illumination dependence of I–V and C–V characterization of Au/InSb/InP(100) Schottky structure

4. The interface states and series resistance effects on the forward and reverse bias I–V, C–V and G/ω-V characteristics of Al–TiW–Pd2Si/n-Si Schottky barrier diodes

5. Interface control and photovoltaic properties of n-type silicon/metal junction by organic dye

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